AO3407
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
Symbol
Test Condition
Min.
Typ.
Miax.
Unit
BV
DSS
R
DS(on)
R
DS(on)
V
GS
= 0V, I
D
= -250uA
V
GS
= -10V, I
D
= -4.1A
V
GS
= -4.5V, I
D
= -3A
-30
48.0
64.0
64.5
87.0
V
mΩ
V
GS(th)
I
DSS
I
GSS
g
fs
V
DS
=V
GS
, I
D
= -250uA
V
DS
= -24V, V
GS
= 0V
V
GS
=
±
20V, V
DS
= 0V
V
DS
= -5V, I
D
= -
4
A
-1.0
-1
-3.0
-1
±
100
V
uA
nA
S
5.5
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
= -15V , I
D
= -5.3A
V
GS
= -10V
9.35
3.43
1.7
10.8
nC
V
DD
= -15V, RL=15Ω
I
D
= -1 A, V
GEN
= -10 V
R
G
= 6Ω
2.33
22.53
3.87
551.57
90.96
60.79
ns
V
DS
= -15 V, V
GS
= 0V
f = 1.0 MHz
pF
I
S
V
SD
I
S
= 2.6 A, V
GS
= 0V
-2.6
-1.3
A
V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
-2-
ETC [ ETC ]
