IRF830
Power Field Effect Transistor
N–Channel Enhancement Mode
Silicon Gate TMOS
This TMOS Power FET is designed for high voltage, high speed
power switching applications such as switching regulators, converters,
solenoid and relay drivers.
http://onsemi.com
•
Silicon Gate for Fast Switching Speeds
•
Low R
DS(on)
to Minimize On–Losses, Specified at Elevated
Temperature
•
Rugged — SOA is Power Dissipation Limited
•
Source–to–Drain Diode Characterized for Use with Inductive Loads
TMOS POWER FET
4.5 AMPERES
500 VOLTS
R
DS(on)
= 1.5
Ω
N–Channel
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (R
GS
= 1.0 MΩ)
Gate–Source Voltage
Drain Current
Continuous, T
C
= 25°C
Continuous,
T
C
= 100°C
Peak, T
C
= 25°C
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage
Temperature Range
Symbol
V
DSS
V
DGR
V
GS
I
D
4.5
3.0
18
P
D
T
J
, T
stg
75
0.6
– 55 to 150
Watts
W/°C
°C
4
Value
500
Unit
Vdc
Vdc
Vdc
Adc
D
"
20
500
®
G
S
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction–to–Case
— Junction–to–Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/8″ from Case
for 5 Seconds
°C/W
R
θJC
R
θJA
T
L
1.67
62.5
300
°C
1
2
3
TO–220AB
CASE 221A
STYLE 5
PIN ASSIGNMENT
1
2
3
4
Gate
Drain
Source
Drain
ORDERING INFORMATION
Device
IRF830
See the MTM4N45 Data Sheet for a complete set of design curves for the
product on this data sheet. Design curves of the MTP4N45 are applicable for
this product.
Package
TO–220AB
Shipping
50 Units/Rail
©
Semiconductor Components Industries, LLC, 2000
1
April, 2000 – Rev. 0
Publication Order Number:
IRF830/D
ETC [ ETC ]
