IR2113L6 参数 Datasheet PDF下载

PD - 91883

IR2113L6

HIGH AND LOW SIDE DRIVER

Features

n

Floating channel designed for bootstrap operation

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

n

Gate drive supply range from 10 to 20V

n

Undervoltage lockout for both channels

n

Separate logic supply range from 5 to 20V

Logic and power ground ±5V offset

n

CMOS Schmitt-triggered inputs with pull-down

n

Cycle by cycle edge-triggered shutdown logic

n

Matched propagation delay for both channels

n

Outputs in phase with inputs

Product Summary

V

OFFSET

I

O

+/-

V

OUT

t

on/off

(typ.)

Delay Matching

600V max.

2A / 2A

10 - 20V

120 & 94 ns

10 ns

Description

The IR2113L6 is a high voltage, high speed power MOSFET

and IGBT driver with independent high and low side refer-

enced output channels. Proprietary HVIC and latch immune

CMOS technologies enable ruggedized monolithic construc-

tion. Logic inputs are compatible with standard CMOS or

LSTTL outputs. The output drivers feature a high pulse

current buffer stage designed for minimum driver cross-con-

duction. Propagation delays are matched to simplify use in

high frequency applications. The floating channel can be

used to drive an N-channel power MOSFET or IGBT in the

high side configuration which operates up to 600 volts.

Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All

voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissi-

pation ratings are measured under board mounted and still air conditions.

Symbol

V

B

V

S

V

HO

V

CC

V

LO

V

DD

V

SS

V

IN

dV

S

/dt

P

D

R

thJA

T

j

T

S

T

L

Parameter

High Side Floating Supply Absolute Voltage

High Side Floating Supply Offset Voltage

High Side Output Voltage

Low Side Fixed Supply Voltage

Low Side Output Voltage

Logic Supply Voltage

Logic Supply Offset Voltage

Logic Input Voltage (HIN, LIN & SD)

Allowable Offset Supply Voltage Transient (Fig. 16)

Package Power Dissipation @ T

A

≤

= 25°C (Fig. 19)

Thermal Resistance, Junction to Ambient

Junction Temperature

Storage Temperature

Package Mounting Surface Temperature

Weight

Min.

-0.5

—

V

S

-0.5

-0.5

-0.5

-0.5

V

CC

- 20

V

SS

- 0.5

—

—

—

-55

-55

Max.

Units

V

S

+ 20

600

V

B

+ 0.5

20

V

CC

+ 0.5

V

SS

+ 20

V

CC

+ 0.5

V

DD

+ 0.5

50

1.6

75

125

150

300

1.5 (typical)

V

V/ns

W

°C/W

°C

g

www.irf.com

1

4/13/99

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