Philips Semiconductors
Product specification
High-speed double diode
FEATURES
•
Small plastic SMD package
•
High switching speed: max. 4 ns
•
Continuous reverse voltage:
max. 75 V
•
Repetitive peak reverse voltage:
max. 85 V
•
Repetitive peak forward current:
max. 450 mA.
handbook, halfpage
2
BAV99
PINNING
PIN
1
2
3
DESCRIPTION
anode
cathode
common connection
DESCRIPTION
The BAV99 consists of two
high-speed switching diodes
connected in series, fabricated in
planar technology, and encapsulated
in the small SOT23 plastic SMD
package.
1
APPLICATIONS
•
High-speed switching in thick and
thin-film circuits.
2
3
3
Marking code:
A7p = made in Hong Kong; A7t = made in Malaysia.
MAM232
1
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
V
RRM
V
R
I
F
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
4
1
0.5
250
+150
150
A
A
A
mW
°C
°C
−
−
−
−
−
85
75
215
125
450
V
V
mA
mA
mA
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1999 May 11
2
ETC [ ETC ]
