Philips Semiconductors
Product specification
High-speed diode
BAS16
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
VF
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
VR = 25 V
VR = 75 V
715
mV
855
1
mV
V
1.25
V
IR
reverse current
30
1
nA
µA
µA
µA
pF
ns
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C
30
50
1.5
4
Cd
trr
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
Vfr
forward recovery voltage
when switched from IF = 10 mA; tr = 20 ns;
see Fig.8
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
330
UNIT
Rth j-tp
Rth j-a
K/W
K/W
500
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 26
3
ETC [ ETC ]
