Philips Semiconductors
Product specification
High-speed diode
BAS16
FEATURES
DESCRIPTION
PINNING
PIN
• Small plastic SMD package
The BAS16 is a high-speed switching
diode fabricated in planar technology,
and encapsulated in a small SOT23
plastic SMD package.
DESCRIPTION
• High switching speed: max. 4 ns
1
2
3
anode
• Continuous reverse voltage:
max. 75 V
not connected
cathode
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
handbook, halfpa2ge
1
2
n.c.
APPLICATIONS
1
• High-speed switching in hybrid
3
thick and thin-film circuits.
3
MAM185
Marking code: A6p = made in Hong Kong; A6t = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
85
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
V
V
75
IF
see Fig.2; note 1
215
500
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t = 1 s
−
−
−
−
4
A
1
A
0.5
250
+150
150
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 26
2
ETC [ ETC ]
