Philips Semiconductors
Product specification
Quadruple bilateral switches
HEF4066B
gates
V
DD
V
Dynamic power
dissipation per
package (P)
5
10
15
TYPICAL FORMULA FOR P (µW)
800 f
i
+ ∑
(f
o
C
L
)
×
V
DD 2
3 500 f
i
+ ∑
(f
o
C
L
)
×
V
DD 2
10 100 f
i
+ ∑
(f
o
C
L
)
×
V
DD 2
where
f
i
= input freq. (MHz)
f
o
= output freq. (MHz)
C
L
= load capacitance (pF)
∑
(f
o
C
L
) = sum of outputs
V
DD
= supply voltage (V)
Notes
1. V
is
is the input voltage at a Y or Z terminal, whichever is assigned as input.
2. V
os
is the output voltage at a Y or Z terminal, whichever is assigned as output.
3. R
L
= 10 kΩ to V
SS
; C
L
= 50 pF to V
SS
; E
n
= V
DD
; V
is
= V
DD
(square-wave); see Figs 6 and 10.
4. R
L
= 10 kΩ; C
L
= 50 pF to V
SS
; E
n
= V
DD
(square-wave);
V
is
= V
DD
and R
L
to V
SS
for t
PHZ
and t
PZH
;
V
is
= V
SS
and R
L
to V
DD
for t
PLZ
and t
PZL
; see Figs 6 and 11.
5. R
L
= 10 kΩ; C
L
= 15 pF; E
n
= V
DD
; V
is
=
1
⁄
2
V
DD(p-p)
(sine-wave, symmetrical about
1
⁄
2
V
DD
); f
is
= 1 kHz; see Fig.7.
6. R
L
= 1 kΩ; V
is
=
1
⁄
2
V
DD(p-p)
(sine-wave, symmetrical about
1
⁄
2
V
DD
);
V
os
(B)
-
20 log
------------------ =
-50 dB; E
n
(A)
=
V
SS
;
E
n
(
B
)
=
V
DD
; see Fig. 8.
V
is
(
A
)
7. R
L
= 10 kΩ to V
SS
; C
L
= 15 pF to V
SS
; E
n
= V
DD
(square-wave); crosstalk is
V
os
(peak value); see Fig.6.
8. R
L
= 1 kΩ; C
L
= 5 pF; E
n
= V
SS
; V
is
=
1
⁄
2
V
DD(p-p)
(sine-wave, symmetrical about
1
⁄
2
V
DD
);
V
os
-
20 log
-------- =
-50 dB; see Fig. 7.
V
is
9. R
L
= 1 kΩ; C
L
= 5 pF; E
n
= V
DD
; V
is
=
1
⁄
2
V
DD(p-p)
(sine-wave, symmetrical about
1
⁄
2
V
DD
);
V
os
-
20 log
-------- =
-3 dB; see Fig. 7.
V
is
Fig.6
Fig.7
January 1995
6
ETC [ ETC ]
