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D882 参数 Datasheet PDF下载

D882图片预览
型号: D882
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN晶体管 [SI NPN TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 24 K
品牌: ETC [ ETC ]
   
YOUDA TRANSISTOR
Si NPN TRANSISTOR D882
DESCRIPTION AND FEATURES
*Collector-Emitter voltage: BV
CBO
= 40V
*Collector current up to 3A
*High h
FE
linearity
PIN CONFIGURATIONS
PIN
1
2
3
D882
SYMBOL
Emitter
Collector
Base
ABSOLUTE MAXIMUM RATINGS
(Tamb=25 )
PARAMETER
SYMBOL
Collector-Base Voltage
BV
CBO
Collector-Emitter Voltage
BV
CEO
Emitter-Base Voltage
BV
EBO
Tcase=25
Collector Dissipation
P
CM
Tamb=25
DC
I
CM
Collector Current
Pulse
Icp
Base Current
I
B
Junction Temperature
Tj
Storage Temperature
Tstg
ELECTRICAL CHARACTERISTICS
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
(Tamb=25
VALUE
40
30
5
10
1
3
7
0.6
+150
-55 +150
UNIT
V
V
V
W
W
A
A
A
,all voltage referenced to GND Unless otherwise specified)
SYMBOL
I
CBO
I
EBO
h
FE
1
h
FE
2
V
CE(sat)
V
BE(sat)
f
T
Cob
TEST CONDITIONS
Vc
B
=30V, I
E
=0
V
EB
=3V, I
C
=0
Vc
E
=2V, I
C
=20mA
Vc
E
=2V, I
C
=1A
Ic=2A, I
B
=0.2A
Ic=2A, I
B
=0.2A
Vc
E
=5V, I
C
=0.1A
Vc
B
=10V,
I
E
=0,f=1MHz
MIN
TYP
MAX
100
100
UNIT
nA
nA
30
100
200
0.3
1.0
80
45
400
0.5
2.0
V
V
MHz
pF
CLASSIFICATION OF h
FE
RANK
RANGE
Q
100
200
160
P
320
200
E
400
WuXi YouDa Electronics Co., Ltd
Add: No.5 Xijin Road, National Hi-Tech Industrial Development Zone, Wuxi Jiangsu China
Tel: 86-510-5205117 86-510-5205108
Fax: 86-510-5205110
Website: www.e-youda.com
SHENZHEN OFFICE Tel
86-755-83740369
13823533350 Fax
86-755-83741418
Ver 3.1
1 of 1
2004-9-20