Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
V
V
DD
V
handbook, full pagewidth
agc
DD
1 nF
1 nF
140 kΩ
1 nF
100 kΩ
L4
270 kΩ
L3
1 nF
1 nF
50 Ω
L1
output
L2
1 nF
50 Ω
input
C3
0.5 to
3.5 pF
C4
4 to 40 pF
1 nF
C1
2 to 18 pF
C2
0.5 to 3.5 pF
MGE801
1.8 kΩ
360 Ω
V
DD
VDD = 12 V; GS = 3.3 mS; GL = 1 mS.
L1 = L4 = 200 nH; 11 turns 0.5 mm copper wire, without spacing, internal diameter 3 mm.
L2 = 2 cm, silvered 0.8 mm copper wire, 4 mm above ground plane.
L3 = 2 cm, silvered 0.5 mm copper wire, 4 mm above ground plane.
Fig.18 Gain control test circuit at f = 800 MHz.
1996 Aug 01
9
ETC [ ETC ]
