Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
V
handbook, full pagewidth
DD
47 µF
1 nF
1 nF
V
agc
1 nF
20 µH
1 nF
50 Ω
output
1.8 kΩ
47 kΩ
L2
1 nF
C1
5.5 pF
50 Ω
1 nF
360 Ω
input
15 pF
L1
10 pF
140 kΩ
1 nF
D1
BB405
D2
BB405
V
DD
330 kΩ
330 kΩ
100 kΩ
1 nF
1 nF
V
V
tun
tun
input
MGE802
output
VDD = 12 V; GS = 2 mS; GL = 0.5 mS.
L1 = 45 nH; 4 turns 0.8 mm copper wire, internal diameter 4 mm.
L2 = 160 nH; 3 turns 0.8 mm copper wire, internal diameter 8 mm.
Tapped at approximately half a turn from the cold side, to adjust GL = 0.5 mS. C1 adjusted for GS = 2 mS.
Fig.17 Gain control test circuit at f = 200 MHz.
1996 Aug 01
8
ETC [ ETC ]
