Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
MGC466
MGC467
3
2
3
10
10
rs
10
y
y
ϕ
is
rs
(deg)
(mS)
(µS)
b
is
ϕ
rs
2
1
10
10
y
rs
1
10
10
10
1
g
is
2
10
1
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C.
VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C.
Fig.13 Input admittance as a function of the
frequency; typical values.
Fig.14 Reverse transfer admittance and phase as a
function of frequency; typical values.
MGC468
MGC469
2
2
10
fs
10
10
y
os
y
ϕ
b
os
os
(mS)
fs
y
fs
(deg)
(mS)
1
10
10
ϕ
fs
g
1
2
10
10
1
1
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C.
VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C.
Fig.15 Forward transfer admittance and phase as a
function of frequency; typical values.
Fig.16 Output admittance as a function of the
frequency; typical values.
1996 Aug 01
7
ETC [ ETC ]
