Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
MGE812
MGE810
30
1.5
handbook, halfpage
handbook, halfpage
V
= 4 V
G2-S
C
|y
|
os
(pF)
fs
(mS)
24
1.4
3 V
2 V
18
12
6
1.3
1.2
1.1
12 mA
1 V
0 V
10 mA
8 mA
0
−1
1.0
4
0
1
6
8
10
12
(V)
14
V
(V)
G1
V
DS
VDS = 8 V; Tamb = 25 °C.
VG2-S = 4 V; f = 1 MHz; Tamb = 25 °C.
Fig.9 Forward transfer admittance as a function of
gate 1 voltage; typical values.
Fig.10 Output capacitance as a function of
drain-source voltage; typical values.
MGE809
MBH479
2.3
2.4
handbook, halfpage
handbook, halfpage
C
is
C
is
(pF)
(pF)
2.1
2.3
1.9
1.7
1.5
1.3
2.2
2.1
2.0
−2.4
−1.6
−0.8
0
0.8
(V)
6
4
2
0
−2
(V)
V
V
G2−S
G1-S
VDS = 8 V; VG2-S = 4 V; f = 1 MHz; Tamb = 25 °C.
VDS = 8 V; VG1-S = 0 V; f = 1 MHz; Tamb = 25 °C.
Fig.11 Gate 1 input capacitance as a function of
gate 1-source voltage; typical values.
Fig.12 Gate 1 input capacitance as a function of
gate 2-source voltage; typical values.
1996 Aug 01
6
ETC [ ETC ]
