Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
MGE815
MGE813
24
24
handbook, halfpage
handbook, halfpage
I
I
D
D
3 V
V
=
G1-S
(mA)
(mA)
V
= 4 V
2 V
G2-S
0.4 V
20
20
16
12
8
1 V
0.3 V
0.2 V
16
12
8
0.1 V
0 V
−0.1 V
−0.2 V
−0.3 V
0 V
4
4
−0.4 V
−0.5 V
0
0
−1
0
1
0
2
4
6
8
10
V
(V)
G1
V
(V)
DS
VG2-S = 4 V; Tamb = 25 °C.
VDS = 8 V; Tamb = 25 °C.
Fig.5 Output characteristics; typical values.
Fig.6 Transfer characteristics; typical values.
MGE814
MGE811
24
30
handbook, halfpage
handbook, halfpage
I
D
4 V
3 V
2 V
|y
|
fs
(mS)
24
(mA)
max
typ
20
16
12
8
1 V
18
12
6
min
4
V
= 0 V
0.5 V
G2-S
4
0
0
−1600
−1200
−800
−400
0
(mV)
400
0
8
12
16
(mA)
20
V
G1
I
D
VDS = 8 V; VG2-S = 4 V; Tamb = 25 °C.
VDS = 8 V; Tamb = 25 °C.
Fig.7 Drain current as a function of gate 1
voltage; typical values.
Fig.8 Forward transfer admittance as a function of
drain current; typical values.
1996 Aug 01
5
ETC [ ETC ]
