Philips Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
FEATURES
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
handbook, halfpage
d
4
3
2
• Low noise gain controlled amplifier up to 1 GHz.
g
2
g
1
APPLICATIONS
• VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
1
s,b
Top view
Marking code: MOp.
MAM039
DESCRIPTION
Depletion type field effect transistor in a plastic
microminiature SOT143 or SOT143R package with source
and substrate interconnected. The transistors are
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.
Fig.1 Simplified outline (SOT143)
and symbol; BF998.
d
handbook, halfpage
3
4
CAUTION
g
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
2
g
1
2
1
PINNING
s,b
MAM040
Top view
PIN
SYMBOL
DESCRIPTION
1
2
3
4
s, b
d
source
drain
Marking code: MOp.
Fig.2 Simplified outline (SOT143R)
and symbol; BF998R.
g2
g1
gate 2
gate 1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
12
UNIT
VDS
ID
drain-source voltage
drain current
−
V
−
30
200
−
mA
mW
mS
pF
Ptot
yfs
total power dissipation
−
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
24
Cig1-s
Crs
F
2.1
25
1
−
f = 1 MHz
f = 800 MHz
−
fF
−
dB
°C
Tj
operating junction temperature
−
150
1996 Aug 01
2
ETC [ ETC ]
