STTA1206D/DI/G
APPLICATION DATA (Cont’d)
Fig. B:
STATIC CHARACTERISTICS
Conduction
losses :
I
P1 = V
t0
. I
F(AV)
+ R
d
. I
F2(RMS)
IF
Rd
VR
V
IR
V tO
VF
Reverse
losses :
P2 = V
R
. I
R
. (1 -
δ)
Fig. C:
TURN-OFF CHARACTERISTICS
V
IL
TRANSISTOR
I
t
Turn-on
losses :
(in the transistor, due to the diode)
P5 =
+
V
R
×
I
RM
2
×
( 3
+
2
×
S
)
×
F
V
R
×
I
RM
6
x dI
F
dt
×
I
L
×
(
S
+
2 )
×
F
2
x dI
F
dt
I
dI F /dt
V
I RM
ta tb
t
dI R /dt
VR
trr = ta + tb
S = tb / ta
DIODE
Turn-off
losses (in the diode) :
P3 =
V
R
×
I
RM
2
×
S
×
F
6
x dI
F
dt
P3 and P5 are suitable for power MOSFET and
IGBT
Fig. D:
TURN-ON CHARACTERISTICS
IF
dI F /dt
I Fmax
0
VF
V Fp
t
Turn-on
losses :
P4 = 0.4 (V
FP
- V
F
) . I
Fmax
. t
fr
. F
1.1V F
0
tfr
VF
t
6/9
ETC [ ETC ]
