Philips Semiconductors
Product specification
Thyristors
BT151 series
15
Ptot / W
conduction
angle
degrees
30
60
90
120
180
form
factor
Tmb(max) / C
a
4
2.8
2.2
1.9
1.57
105.5
120
100
ITSM / A
IT
ITSM
a = 1.57
2.2
2.8
4
118.5
1.9
112
10
80
60
40
20
time
T
Tj initial = 25 C max
5
0
0
1
2
3
4
5
IT(AV) / A
6
7
125
8
0
1
10
100
Number of half cycles at 50Hz
1000
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
ITSM / A
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
1000
25
IT(RMS) / A
20
dI
T
/dt limit
100
15
10
IT
T
I TSM
time
5
Tj initial = 25 C max
10
10us
100us
T/s
1ms
10ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
10ms.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
109˚C.
VGT(Tj)
VGT(25 C)
15
IT(RMS) / A
BT151
1.6
109 C
1.4
1.2
1
10
5
0.8
0.6
0
-50
0
50
Tmb / C
100
150
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
June 1999
3
Rev 1.300
ETC [ ETC ]
