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BC848B/E8 参数 Datasheet PDF下载

BC848B/E8图片预览
型号: BC848B/E8
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管| BJT | NPN | 30V V( BR ) CEO | 100MA I(C ) | SOT- 23\n [TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | SOT-23 ]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 219 K
品牌: ETC [ ETC ]
 浏览型号BC848B/E8的Datasheet PDF文件第2页浏览型号BC848B/E8的Datasheet PDF文件第3页浏览型号BC848B/E8的Datasheet PDF文件第4页浏览型号BC848B/E8的Datasheet PDF文件第5页  
BC846 thru BC849
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (NPN)
Mounting Pad Layout
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
0.031 (0.8)
0.035 (0.9)
Top View
Pin Configuration
1
= Base
2
= Emitter
3
= Collector
Dimensions in inches
and (millimeters)
0.079 (2.0)
0.037 (0.95)
0.037 (0.95)
1
2
max. .004 (0.1)
Type
BC846A
B
BC847A
B
C
Marking
1A
1B
1E
1F
1G
Type
BC848A
B
C
BC849B
C
Marking
1J
1K
1L
2B
2C
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Features
• NPN Silicon Epitaxial Planar Transistors for switching
and AF amplifier applications.
• Especially suited for automatic insertion in thick and
thin-film circuits.
• These transistors are subdivided into three groups (A, B,
and C) according to their current gain. The type BC846 is
available in groups A and B, however, the types BC847 and
BC848 can be supplied in all three groups. The BC849 is a
low noise type available in groups B and C. As complementary
types, the PNP transistors BC856...BC859 are recommended.
(T
A
= 25°C unless otherwise noted)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Maximum Ratings and Thermal Characteristics
Parameter
Collector-Base Voltage
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
BC846, BC847
BC848, BC849
Symbol
V
CBO
Value
80
50
30
80
50
30
65
45
30
6
5
100
200
200
200
310
(1)
(1)
Unit
V
Collector-Emitter Voltage
V
CES
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
SB
= 50°C
V
CEO
V
EBO
I
C
I
CM
I
BM
–I
EM
P
tot
R
θJA
R
θSB
T
j
T
S
V
V
mA
mA
mA
mA
mW
°C/W
°C/W
°C
°C
Thermal Resistance Junction to Ambiant Air
Thermal Resistance Junction to Substrate Backside
Junction Temperature
Storage Temperature Range
Note:
(1) Device on fiberglass substrate, see layout on third page.
450
320
(1)
150
–65 to +150
Document Number 88164
09-May-02
www.vishay.com
1