CHINA GUANGDONG DONGGUAN HAROM
ELECTRONICS CO., LTD
TO-92
www.haorm.cn
Plastic-Encapsulate Transistors
TO-92
BC635/637/639
FEATURES
High current transistors
TRANSISTOR (NPN)
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
Collector-Emitter Voltage
Parameter
BC635
BC637
BC639
V
CEO
Collector-Emitter Voltage
BC635
BC637
BC639
V
EBO
I
C
P
C
T
J
T
stg
Emitter-Base Voltage
1 2 3
Value
45
60
100
45
60
80
5
1
0.625
150
-65-150
Units
V
V
V
V
V
V
V
A
W
℃
℃
TYP
MAX
UNIT
V
V
V
0.1
0.1
μA
μA
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CEO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
DC current gain
h
FE(3)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V
CE(sat)
V
BE
f
T
V
CB
= 30 V,I
E
=0
V
EB
=5V, I
B
=0
V
CE
=2 V, I
C
= 5mA
V
CE
=2V, I
C
=150mA
BC635
BC637-10/BC639-10
BC637-16/BC639-16
V
CE
=2V, I
C
= 500mA
I
C
=500mA, I
B
=50mA
V
CE
=2V, I
C
=500mA
V
CE
=5V, I
C
=10mA,f= 50 MH
Z
100
25
40
63
100
25
0.5
1
V
V
MHz
250
160
250
Test
conditions
BC635
BC637
BC639
Collector cut-off current
Emitter cut-off current
MIN
45
60
80
I
C
=10mA, I
B
=0
Collector-emitter breakdown voltage
ETC [ ETC ]
