CHINA GUANGDONG DONGGUAN HAROM
ELECTRONICS CO., LTD
TO-92 Plastic-Encapsulate Transistors
www.harom.cn
B772
TRANSISTOR(NPN)
TO-92
FEATURES
Low speed switching
1.
EMITTER
MAXIMUM RATINGS(T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-30
-6
-3
0.625
150
-55-150
Units
V
V
V
A
W
℃
℃
2. COLLECTOR
3.
BASE
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
Test
conditions
MIN
-40
-30
-6
-1
-10
-1
60
32
-0.5
-1.5
50
V
V
MHz
400
TYP
MAX
UNIT
V
V
V
μA
μA
μA
I
C
=-100μA ,I
E
=0
I
C
= -10mA ,
I
B
=0
I
E
= -100μA,I
C
=0
V
CB
= -40V, I
E
=0
V
CE
=-30V, I
B
=0
V
EB
=-6V, I
C
=0
V
CE
= -2V, I
C
= -1A
V
CE
=-2V, I
C
= -100mA
I
C
=-2A, I
B
= -0.2A
I
C
=-2A, I
B
= -0.2A
V
CE
= -5V, I
C
=-0.1A
f =10MHz
CLASSIFICATION OF
Rank
Range
R
60-120
h
FE(1)
O
100-200
Y
160-320
GR
200-400
ETC [ ETC ]
