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2SC3390B 参数 Datasheet PDF下载

2SC3390B图片预览
型号: 2SC3390B
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管| BJT | NPN | 50V V( BR ) CEO | 100MA I(C ) | SPAKVAR\n [TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | SPAKVAR ]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 24 K
品牌: ETC [ ETC ]
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2SC3390
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
55
50
5
100
300
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
Noise figure
Note:
B
100 to 200
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
V
BE
V
CE(sat)
f
T
Cob
NF
Min
55
50
5
100
Typ
200
1.0
Max
0.5
0.5
320
0.75
0.2
3.5
5.0
V
V
MHz
pF
dB
Unit
V
V
V
µA
µA
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA, R
BE
=
I
E
= 10
µA,
I
C
= 0
V
CB
= 18 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA
V
CE
= 12 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 1 mA
V
CE
= 12 V, I
C
= 2 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 6 V, I
C
= 0.1 mA,
R
g
= 1 kΩ, f = 1 kHz
1. The 2SC3390 is grouped by h
FE
as follows.
C
160 to 320
See characteristic curves of 2SC458(LG).
2