T2N4401
Low Power Bipolar Transistors
Absolute Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Power Dissipation at T
a
= 25°C
Derate above 25°C
Power Dissipation at T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance
Junction to Case
Junction to Ambient
Rth
Rth
(j-c)
(j-a)
Symbol
V
CEO
V
CBO
V
EBO
I
C
T2N4401
40
60
6
600
625
5.0
1.5
12
-55 to +150
Unit
V
mA
mW
mW/°C
W
W/°C
°C
P
D
T
j
, T
stg
83.3
°C/W
200
Electrical Characteristics (T
a
= 25°C unless otherwise specified)
Characteristic
Collector Emitter Voltage
I
C
= 1mA, I
B
= 0
Collector Base Voltage
I
C
= 100µA, I
E
= 0
Emitter Base Voltage
I
E
= 100µA, I
C
= 0
Base Cut off Current
V
CE
= 35V, V
EB
= 0.4V
Collector Cut off Current
V
CE
= 35V, V
EB
= 0.4V
Collector Emitter Saturation Voltage
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base Emitter Saturation Voltage
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
*Pulse Test : Pulse Width:
≤300µs,
Duty
≤2.0%
Symbol
BV
CEO
*
BV
CBO
BV
EBO
I
BEV
<0.1
I
CEX
<0.4
<0.75
V
V
BE (Sat)
*
0.75 - 0.95
<1.2
µA
T2N4401
>40
>60
>6
V
Unit
V
CE (Sat)
*
Page 2
10/04/06 V1.0
ETC [ ETC ]
