24LC01B/02B
1K/2K 2.5V I
2
C
™
Serial EEPROM
FEATURES
• Single supply with operation down to 2.5V
• Low power CMOS technology
- 1 mA active current typical
- 10 µA standby current typical at 5.5V
- 5 µA standby current typical at 3.0V
• Organized as a single block of
128 bytes (128 x 8) -1K or 256 bytes (256 x 8) -2K
• 2-wire serial interface bus, I
2
C™ compatible
• 100 kHz (2.5V) and 400kHz (5.0V) compatibility
• Self-timed write cycle (including auto-erase)
• Page-write buffer for up to 8 bytes
• 2 ms typical write cycle time for page-write
• Hardware write protect for entire memory
• Can be operated as a serial ROM
• ESD protection > 3,000V
• 1,000,000 E/W cycles guaranteed
• Data retention > 200 years
• 8 pin DIP, SOIC, TSSOP* or SOT-23* package
• Available for temperature ranges
- Commercial (C):
0°C to +70°C
- Industrial (I):
-40°C to +85°C
PACKAGE TYPES
PDIP, SOIC
A0
A1
A2
Vss
1
24LC01B/02B
2
3
4
8
7
6
5
Vcc
WP
SCL
SDA
TSSOP*
24LC01B/02B
A0
A1
A2
V
SS
1
2
3
4
8
7
6
5
Vcc
WP
SCL
SDA
SOT-23*
SCL
V
SS
SDA
1
2
3
5
WP
24LC01B
DESCRIPTION
The Microchip Technology Inc. 24LC01B and 24LC02B
are 1K bit and 2K bit Electrically Erasable PROMs. The
devices are organized as a single block of 128 x 8 bit or
256 x 8 bit memory with a two wire serial interface. Low
voltage design permits operation down to 2.5 volts with
a standby and active currents of only 5 µA and 1 mA
respectively. The 24LC01B and 24LC02B also have
page-write capability for up to 8 bytes of data. The
24LC01B and 24LC02B are available in the standard
8-pin DIP and an 8-pin surface mount SOIC package.
The SOT-23 and TSSOP packages are available for the
24LC01B.
4
Vcc
* Available for 24LC01B only
BLOCK DIAGRAM
WP
HV GENERATOR
I/O
CONTROL
LOGIC
MEMORY
CONTROL
LOGIC
XDEC
EEPROM
ARRAY
PAGE LATCHES
SDA SCL
YDEC
V
CC
V
SS
SENSE AMP
R/W CONTROL
* Available for 24LC01B only
©
1999 Microchip Technology Inc.
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