Radar Pulsed Power Transistor, lOOW, 2ms Pulse, 20% Duty
PH1214-IOOEL
1.2 - 1.4 GHz
Features
-
_-_-. -
NPN Silicon Microwave Power Transisror
Common Base Configuration
Broadband Class C Operation
High Effkiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input Impedance Matching
Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
Parameter
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
JunctionTemperature
Symbol
V CES
V
EBO
‘c
P
TOT
TJ
I
TSTG
1 -65
Rating
75
3.0
14.1
214
200
Units
V
V
A
w
.I22
CXX~.~:O
fC.25)
i
E*,T:LE
L-J
.CW
[G.iC:I.DG!
!0.331 7
“C
)
“C
)
I
StorageTemperature
~ ~~~~
Parameter
Collector-Emitter
Collector-Emitter
to
+200
Electrical Characteristics
Breakdown Voltage
Leakage Current
at 25°C
Symbol
BV,,,
ICES
R.
.^,
-
100
6.0
52
8
-
-
-
Min
75
Max
-
10
0.7
-
-
-
-
+l.O
3:l
1.5:l
Units
V
mA
“C/W
W
dB
%
dB
dB
-
-
I,=50 mA
V,,=28
V-,=28
V,,=28
V,,=28
V,,=28
V-,=28
V,,=28
I/,,=28
V,,=28
v
V, P,.,=25 W, 1==1.20, 1.30, 1.40 GHz
V, P,,=25 W, F=1.20, 1.30, 1.40 GHz
V, P,,=25
W, F=1.20, 1.30,1.40
GHz
Test Conditions
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
lnout
Return
Loss
Overdrive Stability
Load Mismatch Tolerance
Load Mismatch Stablility
P
OUT
GP
‘IC
V, P,,=25 W. F=l.20,1.30.
1.40 GHz
RL
OD-S
VSWR-T
VSWR-S
V, P,.,=25 W, F=1.20, 1.30, 1.40 GHz
V, P,,=25 W, F=1.20, 1.30.1.40
V, P,,=25 W. F=l.20,
V, P,,=25
1.30.1.40
GHz
GHz
W, F=1.20, 1.30, 1.40 GHz
Broadband Test Fixture Impedances
F(GHz)
1.20
1.30
1.40
z,,w
z,,m
TEST
FIXTURE
:NPLIT
CIRCUIT
1
TEST
FIXTURE
3’ v ‘TPUT
CIRCUIT
2.6 - j3.8
3.0 - j3.4
3.4 - j3.1
3.0 - j2.7
2.4 - j2.6
1.9 - j2.5
5
-
-
502
-1
ZIF
-
-
I’
2s;
5082
-
-
g-140
North
Specifications Subject to Change Without Notice.
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America:
Inc.
Tel. (800)366-2266
Fax
(800)
618-8883
n
Asia/Pacific:
Tel.
Fax
+81
(03) 3226-1671
n
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Tel.
Fax
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+44
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