3SK255
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25
20
15
10
5
V
G2S = 3.0 V
V
G1S = 1.2 V
200
1.0 V
130 mW
0.8 V
0.6 V
100
0.4 V
0.2 V
0
25
50
75
100
125
0
5
10
T
A
– Ambient Temperature – °C
VDS – Drain to Source Voltage – V
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
25
20
15
10
5
40
32
24
16
V
DS = 3.5 V
G2S = 3.5 V
3.0 V
2.5 V
V
DS = 3.5 V
f = 1 kHz
V
2.0 V
V
G2S = 3.5 V
1.5 V
1.0 V
2.0 V
1.5 V
3.0 V
2.5 V
8
0
1.0 V
0
0.5
1.0
1.5
2.0
2.5
–0.5
0
0.5
1.0
1.5
2.0
VG1S – Gate1 to Source Voltage – V
VG1S – Gate1 to Source Voltage – V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
40
32
24
16
8
5.0
4.0
3.0
2.0
I
D
= 7 mA
(at VDS = 3.5 V,
G2S = 3.0 V)
V
DS = 3.5 V
f = 1 kHz
V
f = 1 MHz
V
G2S = 3.5 V
3.0 V
2.5 V
1.0
0
1.5 V
2.0 V
1.0 V
0
10
– Drain Current – mA
20
–1.0
0
1.0
2.0
3.0
4.0
I
D
VG2S – Gate2 to Source Voltage – V
3