SFP70N06
Fig 1. On-State Characteristics
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
Fig 2. Transfer Characteristics
10
2
10
2
I
D
, Drain Current [A]
I
D
, Drain Current [A]
175 C
10
1
o
10
1
25 C
-55 C
o
o
※
Notes :
1. 250µ s Pulse Test
2. T
C
= 25
℃
※
Notes :
1. V
DS
= 25V
2. 250µ s Pulse Test
10
-1
10
0
10
0
10
1
10
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
30
Fig 4. On State Current vs.
Allowable Case Temperature
R
DS(ON)
,
Drain-Source On-Resistance [mΩ ]
20
V
GS
= 10V
15
V
GS
= 20V
I
DR
, Reverse Drain Current [A]
25
10
2
10
1
10
175
℃
25
℃
※
Notes :
1. V
GS
= 0V
2. 250µ s Pulse Test
5
※
Note : T
J
= 25
℃
0
0
50
100
150
200
250
300
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Fig 5. Capacitance Characteristics
5500
5000
4500
4000
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
Fig 6. Gate Charge Characteristics
12
V
GS
, Gate-Source Voltage [V]
10
V
DS
= 30V
V
DS
= 48V
Capacitance [pF]
3500
3000
2500
2000
1500
1000
500
0
0
5
※
Notes :
1. V
GS
= 0V
2. f=1MHz
8
C
iss
6
4
C
oss
2
※
Note : I
D
= 70.0 A
C
rss
10
15
20
25
30
35
0
0
10
20
30
40
50
60
70
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
3/7
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