欢迎访问ic37.com |
会员登录 免费注册
发布采购

BC856B/E9 参数 Datasheet PDF下载

BC856B/E9图片预览
型号: BC856B/E9
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管| BJT | PNP | 65V V( BR ) CEO | 100MA I(C ) | SOT- 23\n [TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 100MA I(C) | SOT-23 ]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 218 K
品牌: ETC [ ETC ]
 浏览型号BC856B/E9的Datasheet PDF文件第2页浏览型号BC856B/E9的Datasheet PDF文件第3页浏览型号BC856B/E9的Datasheet PDF文件第4页浏览型号BC856B/E9的Datasheet PDF文件第5页  
BC856 thru BC859
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (PNP)
Mounting Pad Layout
0.031 (0.8)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
0.035 (0.9)
0.079 (2.0)
Top View
Pin Configuration
1
= Base,
2
= Emitter,
3
= Collector
0.037 (0.95)
0.037 (0.95)
Type
Dimensions in inches
and (millimeters)
Marking
3A
3B
3E
3F
3G
Type
BC858A
B
C
BC859A
B
C
Marking
3J
3K
3L
4A
4B
4C
1
2
max. .004 (0.1)
BC856A
B
BC857A
B
C
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Features
• PNP Silicon Epitaxial Planar Transistors for switching
and AF amplifier applications.
• Especially suited for automatic insertion in thick and
thin-film circuits.
• These transistors are subdivided into three groups
(A, B, and C) according to their current gain. The type
BC856 is available in groups A and B, however, the types
BC857, BC558 and BC859 can be supplied in all three
groups. The BC849 is a low noise type.
• As complementary types, the NPN transistors
BC846...BC849 are recomended.
(T
A
= 25°C unless otherwise noted)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Maximum Ratings and Thermal Characteristics
Parameter
Collector-Base Voltage
BC856
BC857
BC858, BC859
BC856
BC857
BC858, BC859
BC856
BC857
BC858, BC859
Symbol
–V
CBO
Value
80
50
30
80
50
30
65
45
30
5
100
200
200
200
310
(1)
Unit
V
Collector-Emitter Voltage (Base shorted)
–V
CES
V
Collector-Emitter Voltage (Base open)
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
SB
= 50°C
Thermal Resistance Junction to Ambient Air
–V
CEO
–V
EBO
–I
C
–I
CM
–I
BM
I
EM
P
tot
R
θJA
R
θSB
T
j
T
S
V
V
mA
mA
mA
mA
mW
°C/W
°C/W
°C
°C
450
(1)
320
(1)
150
–65 to +150
Thermal Resistance Junction to Substrate Backside
Junction Temperature
Storage Temperature Range
Note:
(1) Device on fiberglass substrate, see layout on third page.
Document Number 88169
09-May-02
www.vishay.com
1