BC807, BC808
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (PNP)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
Top View
Mounting Pad Layout
0.031 (0.8)
1
2
max. .004 (0.1)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
.007 (0.175)
.005 (0.125)
0.035 (0.9)
0.079 (2.0)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
0.037 (0.95)
0.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 grams
Marking
BC807-16 = 5A BC808-16 = 5E
Codes:
-25 = 5B
-25 = 5F
-40 = 5C
-40 = 5G
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Features
• PNP Silicon Epitaxial Planar Transistors for
switching, AF driver and amplifier applications.
• Especially suited for automatic insertion in thick
and thin-film circuits.
• These transistors are subdivided into three groups
(-16, -25, and -40) according to their current gain.
• As complementary types, the NPN transistors
BC817 and BC818 are recomended.
(T
A
= 25°C unless otherwise noted)
Maximum Ratings and Thermal Characteristics
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
SB
= 50 ˚C
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Substrate Backside
Junction Temperature
Storage Temperature Range
Note:
(1) Device on fiberglass substrate, see layout on next page.
(Base shorted)
Symbol
BC807
BC808
BC807
BC808
–V
CES
–V
CEO
–V
EBO
–I
C
–I
CM
–I
BM
I
EM
P
tot
R
θJA
R
θSB
T
j
T
S
Value
50
30
45
25
5
800
1000
200
1000
310
(1)
450
(1)
320
(1)
150
–65 to +150
Unit
V
V
V
mA
mA
mA
mA
mW
°C/W
°C/W
°C
°C
(Base open)
Document Number 88162
09-May-02
www.vishay.com
1
ETC [ ETC ]
