BC807, BC808
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Parameter
DC Current Gain
Current Gain Group –16
– 25
– 40
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Gain-Bandwidth Product
Collector-Base Capacitance
Note:
(1)Device on fiberglass substrate, see layout.
J
= 25°C unless otherwise noted)
Symbol
Test Condition
–V
CE
= 1V, –I
C
= 100mA
Min
100
160
250
40
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
100
12
Max
250
400
600
—
0.7
1.3
1.2
100
5
100
—
—
Unit
—
—
—
—
V
V
V
nA
µA
nA
MHz
pF
h
FE
–V
CE
= 1V, –I
C
= 500mA
–V
CEsat
V
BEsat
–V
BEon
–I
CBO
–I
EBO
f
T
C
CBO
–I
C
= 500mA, –I
B
= 50mA
–I
C
= 500mA, –I
B
= 50mA
–V
CE
= 1V, –I
C
= 500mA
–V
CB
= 20V
–V
CB
= 20V, T
J
= 150°C
–V
EB
= 4 V
–V
CE
= 5V, –I
C
= 10mA
f = 50 MHz
–
V
CB
= 10V, f = 1 MHz
0.30 (7.5)
Layout for R
θJA
test
Thickness: Fiberglass 0.059 in. (1.5 mm)
Copper leads 0.012 in. (0.3 mm)
0.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
0.59 (15)
0.47 (12)
0.03 (0.8)
Dimensions in inches (millimeters)
0.2 (5)
0.06 (1.5)
0.20 (5.1)
www.vishay.com
2
Document Number 88162
09-May-02
ETC [ ETC ]
