AO3418, AO3418L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
350
300
250
200
150
100
50
5
4
3
2
1
0
VDS=15V
ID=3.8A
Ciss
Coss
Crss
0
0
1
2
3
4
5
0
5
10
15
20
25
30
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
270
TJ(Max)=150°C
TA=25°C
100.0
10.0
1.0
20
TJ(Max)=150°C
TA=25°C
1.7
15
10
5
10µs
RDS(ON)
limited
3.6
100µs
1ms
0.1s
10ms
1s
10s
DC
13
0
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
V
DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.