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4N600T 参数 Datasheet PDF下载

4N600T图片预览
型号: 4N600T
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道场效应晶体管 [N-Channel Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 2 页 / 39 K
品牌: ETC [ ETC ]
 浏览型号4N600T的Datasheet PDF文件第2页  
Bay Linear
Inspire the Linear Power
N-Channel Field Effect Transistor
4N600(3600)
Description
The Bay Linear n-channel power field effect transistors are
produced using high cell density DMOS technology , These
devices are particularly suited for high voltage applications
such as automotive and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transistors are needed.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D
2
surface
mount power package with a power dissipation up to 2 Watts
Features
Critical DC Electrical parameters
specified at elevated Temp.
Rugged internal source-drain diode
can eliminate the need for external
Zener diode transient suppresser
Super high density cell design for
extremely low R
DS(ON)
V
DSS
= 600V
R
DS (ON)
= 1.9
I
D
= 4.0A
Ordering Information
Device
4N600T
4N600S
Package
TO-220
TO-263 ( D
2
)
Temp.
0 to 150°C
0 to 150°C
Absolute Maximum Rating
Symbol
I
D
(T
C
=25°C)
I
D
(T
C
=100°C)
V
GSV
P
D
T
J
T
STG
Parameter
Drain Current
-Continues
-Pulsed
Gate Source Voltage
Total Power Dissipation @ T
C
=25°C
Derate above 25°C
Operating and Storage
Temperature Range
Max
4.0
2.5
16
±20
75
0.59
-55 to 150
Unit
A
V
W
W/°C
°
°
C
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com