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4N600S 参数 Datasheet PDF下载

4N600S图片预览
型号: 4N600S
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道场效应晶体管 [N-Channel Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 2 页 / 39 K
品牌: ETC [ ETC ]
 浏览型号4N600S的Datasheet PDF文件第1页  
4N600(3600)
Electrical Characteristics (
T
C
=
Symbol
I
DSS
V
V
GS(TH)
R
DS(ON)
I
GSS
25°C unless otherwise specified)
°
Parameter
Zero Gate Voltage Drain Current
Drain-to-Source Breakdown
Gate Threshold Voltage
Static Drain Voltage
Conditions
V
DS
=600V
V
GS
=0V
I
D
=100µA, V
GS
=0
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, I
D
=2.4A
Min
600
2
-
Typ
-
Max
100
-
4
Units
µ
A
V
V
NA
S
pF
pF
pF
NS
-
1.9
100
-100
Gate-to-Source Forward Leakage V
GS
=20V
Gate-to-Source Reverse Leakage V
GS
=-20V
Forward Tranconductance
V
DS
=100V, I
D
=2.4A
g
fs
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
=0V
Output Capacitance
C
OSS
F=1.0 MHZ
Reverse Tras. Capacitance
C
RSS
Turn-ON Delay Time
t
D(ON)
V
DD
=300V
Turn-ON Rise Time
t
r
I
D
=2.4A, R
GEN
=12Ω
Turn-OFF Delay Time
t
d(off)
R
D
=74Ω
Turn-OFF Fall Time
t
F
Maxim Continuous Drain source Diode Forward Current
I
S
Drain Source Diode
V
GS
=0V
V
DS
(note)
Forward Voltage
I
S
=4A
THERMAI CHRACTERISTICS
Thermal Resistance, Junction to Case
R
JC
Thermal Resistance, Junction to Ambient
R
JC
Note: Pulse Test: Pulse With≤ 300
µS,
Duty Cycle
2.0%
2.9
800
110
20
12
18
53
19
4.0
1.50
5
100
A
V
°
C/W
°
C/W
Advance Information-
These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,
computer simulations and/ or initial prototype evaluation.
Preliminary Information-
These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.
The application circuit examples are only to explain the representative applications of the devices and are not intended to guarantee any circuit
design or permit any industrial property right to other rights to execute. Bay Linear takes no responsibility for any problems related to any
industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different
applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.
LIFE SUPPORT AND NUCLEAR POLICY
Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical
implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without
the specific written consent of Bay Linear President.
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com