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P4SMA13A 参数 Datasheet PDF下载

P4SMA13A图片预览
型号: P4SMA13A
PDF下载: 下载PDF文件 查看货源
内容描述: [瞬态电压抑制二极管 Transient Voltage Suppression Diodes]
分类和应用: 二极管光电二极管局域网
文件页数/大小: 3 页 / 957 K
品牌: dowosemi [ DOWO(东沃) ]
 浏览型号P4SMA13A的Datasheet PDF文件第2页浏览型号P4SMA13A的Datasheet PDF文件第3页  
东沃电子  
DOWOSEMI  
P4SMA Series  
Breakdown Voltage: 6.8 to 600 V  
Peak Pulse Power: 400 W  
Surface Mount  
Transient Voltage Suppressors  
SMA/ DO-214AC  
Features  
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Glass passivated chip  
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400 W peak pulse power capability with a  
10/1000 ȝs waveform, repetitive rate (duty  
cycle):0.01 %  
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Low leakage  
Uni and Bidirectional unit  
Excellent clamping capability  
Very fast response time  
RoHS compliant  
Mechanical Data  
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Case: Molded plastic  
Epoxy: UL 94V-0 rate flame retardant  
Lead: Solderable per MIL-STD-750, method  
2026  
˗
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Polarity: Color band denotes cathode end  
except Bipolar  
Mounting position: Any  
Maximum Ratings(TA=25ɗ unless otherwise noted)  
Value  
400  
UNIT  
W
Parameter  
Symbol  
Peak power dissipation with a 10/1000ȝs waveform(1)  
PPP  
Peak pulse current wih a 10/1000ȝs waveform(1)  
Power dissipation on infinite heatsink at TL = 75 °C  
Peak forward surge current, 8.3 ms single half sine-  
IPP  
PD  
See Next Table  
1.0  
A
W
IFSM  
40  
A
wave unidirectional only(2)  
Maximum instantaneous forward voltage at 25 A for  
unidirectional only(3)  
VF  
3.5/5.0  
V
Operating junction and storage temperature range  
TJ, TSTG  
–55 to +150  
°C  
Note:  
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1  
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(3)VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
TEL:0571-87006810  
www.dowosemi.com  
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