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MMBT3904 参数 Datasheet PDF下载

MMBT3904图片预览
型号: MMBT3904
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管NPN硅 [GENERAL PURPOSE TRANSISTOR NPN SILICON]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 6 页 / 123 K
品牌: ZOWIE [ ZOWIE TECHNOLOGY CORPORATION ]
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Zowie Technology Corporation
o
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted) (Continued)
Characteristic
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
DC Current Gain
( I
C
=0.1 mAdc, V
CE=
1.0 Vdc )
( I
C
=1.0 mAdc, V
CE=
1.0 Vdc )
( I
C
=10 mAdc, V
CE=
1.0 Vdc )
( I
C
=50 mAdc, V
CE=
1.0 Vdc )
( I
C
=100 mAdc, V
CE=
1.0 Vdc )
Collector-Emitter Saturation Voltage
( I
C
=10 mAdc, I
B
=1.0 mAdc )
( I
C
=50 mAdc, I
B
=5.0 mAdc )
Base-Emitter Saturation Voltage
( I
C
=10 mAdc, I
B
=1.0 mAdc )
( I
C
=50 mAdc, I
B
=5.0 mAdc )
(3)
(3)
H
FE
40
70
100
60
30
-
-
300
-
-
-
V
CE
(sat)
-
-
0.2
0.3
Vdc
V
BE
(sat)
0.65
-
0.85
0.95
Vdc
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
( I
C
=10 mAdc, V
CE
=20 Vdc, f=100 MH
Z
)
Output Capacitance
( V
CB
=5.0 Vdc, I
E
=0, f=1.0 MH
Z
)
Input Capacitance
( V
EB
=0.5 Vdc, I
C
=0, f=1.0 MH
Z
)
Input Impedance
( V
CE
=10 Vdc, I
C
=1.0 mAdc, f=1.0 kH
Z
)
Voltage Feedback Ratio
( V
CE
=10 Vdc, I
C
=1.0 mAdc, f=1.0 kH
Z
)
Small-Signal Current Gain
( V
CE
=10 Vdc, I
C
=1.0 mAdc, f=1.0 kH
Z
)
Output Admittance
( V
CE
=10 Vdc, I
C
=1.0 mAdc, f=1.0 kH
Z
)
Noise Figure
( V
CE
=5.0 Vdc, I
C
=100 uAdc, R
S
=1.0 k ohm, f=1.0 kH
Z
)
f
T
300
-
MH
Z
C
obo
-
4.0
pF
C
ibo
-
8.0
pF
h
ie
1.0
10
k ohms
h
re
0.5
8.0
X 10
-4
h
fe
100
400
-
h
oe
1.0
40
u mhos
N
F
-
5.0
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
( V
CC
=3.0 Vdc, V
BE
=-0.5 Vdc,
I
C
=10 mAdc, I
B1
=1.0 mAdc )
( V
CC
=3.0 Vdc,
I
C
=10 mAdc, I
B1
=I
B2=
1.0 mAdc )
td
tr
ts
tf
-
-
-
-
35
35
200
50
nS
nS
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300uS, Duty Cycle
REV. : 0
2.0%.
Zowie Technology Corporation