Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
3
BASE
1
2
2
EMITTER
COLLECTOR
3
BC846A,B
1
SOT-23
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
65
80
6.0
100
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
o
o
Symbol
P
D
R
JA
P
D
R
JA
T
J,
T
STG
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW /
o
C
o
C/W
mW
mW /
o
C
o
C/W
o
C
DEVICE MARKING
BC846A = 1A,BC846B = 1B
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
o
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( I
C
=10mAdc )
Collector-Emitter Breakdowe Voltage
( I
C
=10 uAdc, V
EB
=0 )
Collector-Base Breakdowe Voltage
( I
C
=10 uAdc )
Emitter-Base Breakdowe Voltage
( I
E
=1.0 uA )
Collector Cutoff Current
( V
CB
=30 V )
( V
CB
=30 V, T
A
= 150
o
C )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
V
(BR)CEO
65
-
-
Vdc
V
(BR)CES
80
-
-
Vdc
V
(BR)CBO
V
(BR)EBO
80
6.0
-
-
-
-
Vdc
Vdc
I
CBO
-
-
-
-
15
5.0
nAdc
uAdc
REV. : 0
Zowie Technology Corporation
ZOWIE [ ZOWIE TECHNOLOGY CORPORATION ]
