Zowie Technology Corporation
Dual Series Switching Diode
3
ANODE
1
CATHODE
2
3
CATHODE/ANODE
BAV99
1
2
SOT-23
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectifierd Forward Current
(1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Curretn
t=1.0 uS
t=1.0 mS
t=1.0 S
Symbol
V
R
I
F
I
FM( surge )
V
RRM
I
F( AV )
I
FRM
I
FSM
Value
70
215
500
70
715
450
2.0
1.0
0.5
Unit
Vdc
mAdc
mAdc
Vdc
mAdc
mAdc
A
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
o
o
Symbol
P
D
R
JA
P
D
R
JA
T
J,
T
STG
Max.
225
1.8
556
300
2.4
417
-65 to +150
Unit
mW
mW /
o
C
o
C/W
mW
mW /
o
C
o
C/W
o
C
DEVICE MARKING
BAV99=A7
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted) (Continued) (EACH DIODE)
Characteristic
Symbol
Min.
Max.
Unit
o
OFF CHARACTERISTICS
Reverse Breakdown Voltage ( I
BR
=100uAdc )
( I
F
=1.0 mAdc )
( I
F
=10 mAdc )
( I
F
=50 mAdc )
( I
F
=150 mAdc )
( V
R
=70 Vdc )
o
( V
R
=25 Vdc, T
J
=150 C )
o
( V
R
=70 Vdc, T
J
=150 C )
V
(BR)
70
-
-
-
-
-
-
-
-
-
-
-
715
855
1000
1250
2.5
30
50
1.5
6.0
1.75
Vdc
Forward Voltage
V
F
mVdc
Reverse Voltage Leakage Current
Diode Capacitance ( V
R
=0, f=1.0MH
Z
)
I
R
C
J
)
trr
V
FR
uAdc
pF
nS
Vdc
Reverse Recovery Time ( I
F
=I
R
=10 mAdc, I
R
(REC)=1.0mA, R
L=
50
Forward Recovery Voltage ( I
F
=10 mAdc, tr=20nS )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
REV. : 0
Zowie Technology Corporation