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Z8F1602AR020EC 参数 Datasheet PDF下载

Z8F1602AR020EC图片预览
型号: Z8F1602AR020EC
PDF下载: 下载PDF文件 查看货源
内容描述: Z8喝采微控制器与闪存和10位A / D转换器 [Z8 Encore Microcontrollers with Flash Memory and 10-Bit A/D Converter]
分类和应用: 转换器闪存微控制器和处理器外围集成电路时钟
文件页数/大小: 246 页 / 1767 K
品牌: ZILOG [ ZILOG, INC. ]
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Z8F640x/Z8F480x/Z8F320x/Z8F240x/Z8F160x  
Z8 Encore!®  
143  
Caution:  
The byte at each address of the Flash memory cannot be programmed (any  
bits written to 0) more than twice before an erase cycle occurs.  
Page Erase  
The Flash memory can be erased one page (512 bytes) at a time. Page Erasing the Flash  
memory sets all bytes in that page to the value FFH. The Flash Page Select register identi-  
fies the page to be erased. With the Flash Controller unlocked, writing the value 95Hto the  
Flash Control register initiates the Page Erase operation. While the Flash Controller exe-  
cutes the Page Erase operation, the eZ8 CPU idles but the system clock and on-chip  
peripherals continue to operate. The eZ8 CPU resumes operation after the Page Erase  
operation completes. If the Page Erase operation is performed through the On-Chip  
Debugger, poll the Flash Status register to determine when the Page Erase operation is  
complete. When the Page Erase is complete, the Flash Controller returns to its locked  
state.  
Mass Erase  
The Flash memory can also be Mass Erased using the Flash Controller. Mass Erasing the  
Flash memory sets all bytes to the value FFH. With the Flash Controller unlocked, writing  
the value 63Hto the Flash Control register initiates the Mass Erase operation. While the  
Flash Controller executes the Mass Erase operation, the eZ8 CPU idles but the system  
clock and on-chip peripherals continue to operate. Typically, the Flash Memory is Mass  
Erased using the On-Chip Debugger. Via the On-Chip Debugger, poll the Flash Status reg-  
ister to determine when the Mass Erase operation is complete. Although the Flash can be  
Mass Erased by user program code, when the Mass Erase is complete the user program  
code is completely erased. When the Mass Erase is complete, the Flash Controller returns  
to its locked state.  
Flash Controller Bypass  
The Flash Controller can be bypassed and the control signals for the Flash memory  
brought out to the GPIO pins. Bypassing the Flash Controller allows faster Row Program-  
ming algorithms by controlling the Flash programming signals directly.  
Row programing is recommended for gang programming applications and large volume  
customers who do not require in-circuit initial programming of the Flash memory. Mass  
Erase and Page Erase operations are also supported when the Flash Controller is bypassed.  
Please refer to the document entitled Third-Party Flash Programming Support for Z8  
Encore!™ for more information on bypassing the Flash Controller. This document is  
available for download at www.zilog.com.  
PS017610-0404  
Flash Memory