Z8 Encore! XP® 4K Series
Product Specification
221
Table 137. Non Volatile Data Storage
VDD = 2.7 - 3.6V
TA = -40°C to +105°C
Parameter
Minimum Typical
Maximum
Units Notes
NVDS Byte Read Time
NVDS Byte Program Time
Data Retention
34
0.171
100
–
–
–
–
519
39.7
–
µs
With system clock at 20MHz
With system clock at 20MHz
ms
years 25°C
Endurance
160,000
–
cycles Cumulative write cycles for
entire memory
Table 138. Analog-to-Digital Converter Electrical Characteristics and Timing
VDD = 3.0 to 3.6V
TA = 0°C to +70°C
Symbol
Parameter
Minimum Typical
Maximum
Units Conditions
Resolution
10
–
bits
3
Differential Nonlinearity
(DNL)
-1.0
–
–
1.0
LSB External V
= 2.0V;
= 2.0V;
REF
R ← 3.0KΩ
S
3
Integral Nonlinearity (INL)
-3.0
3.0
LSB External V
REF
R ← 3.0KΩ
S
3
3
Offset Error with
Calibration
+1
+3
LSB
LSB
V
Absolute Accuracy with
Calibration
V
Internal Reference Voltage
1.0
2.0
1.1
2.2
1.2
2.4
REFSEL=01
REFSEL=10
REF
R
Reference Buffer Ouput
Impedance
850
Ω
When the internal
reference is buffered
and driven out to the
VREF pin (REFOUT =
1)
REFOUT
1
Analog source impedance affects the ADC offset voltage (because of pin leakage) and input settling
time.
2
Devices are factory calibrated at V
= 3.3V and T = +30°C, so the ADC is maximally accurate under
A
DD
these conditions.
3
LSBs are defined assuming 10-bit resolution.
The input impedance is inversely proportional to the system clock frequency.
4
PS022815-0206
Electrical Characteristics
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