ZXMN2A01F
ELECTRICAL CHARACTERISTICS (at T = 25°C unless otherw ise stated).
A
PARAMETER
S YMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS .
S TATIC
Dra in -S o u rce Bre a kd o w n Vo lta g e
Ze ro Ga te Vo lta g e Dra in Cu rre n t
Ga te -Bo d y Le a ka g e
V(BR)DS S
IDS S
20
V
ID=250µA, VGS =0V
1
VDS =20V, VGS =0V
µA
n A
V
IGS S
100
VGS =±12V, VDS =0V
Ga te -S o u rce Th re s h o ld Vo lta g e
VGS (th )
RDS (o n )
0.7
I =250µA, VDS = VGS
D
S ta tic Dra in -S o u rce On -S ta te Re s is ta n ce
(1)
0.09
6.2
0.12
0.30
VGS =4.5V, ID=4A
Ω
Ω
VGS =2.5V, ID=1.5A
Fo rw a rd Tra n s co n d u cta n ce (3)
DYNAMIC (3)
g fs
S
VDS =10V,ID=4A
In p u t Ca p a cita n ce
Cis s
Co s s
Crs s
299
60
p F
p F
p F
VDS =15 V, VGS =0V,
Ou tp u t Ca p a cita n ce
Re ve rs e Tra n s fe r Ca p a cita n ce
S WITCHING(2) (3)
Tu rn -On De la y Tim e
Ris e Tim e
f=1MHz
33
td (o n )
tr
td (o ff)
tf
2.31
2.60
1.55
1.31
3.1
n s
n s
VDD =10V, ID=4A
RG=6.0Ω, VGS =5V
Tu rn -Off De la y Tim e
Fa ll Tim e
n s
n s
To ta l Ga te Ch a rg e
Ga te -S o u rce Ch a rg e
Ga te -Dra in Ch a rg e
S OURCE-DRAIN DIODE
Dio d e Fo rw a rd Vo lta g e (1)
Qg
n C
n C
n C
VDS =10V,VGS =4.5V,
Qg s
Qg d
0.7
ID=4A
1.0
VS D
0.84
0.95
V
TJ =25°C, IS =0.6A,
VGS =0V
Re ve rs e Re co ve ry Tim e (3)
Re ve rs e Re co ve ry Ch a rg e (3)
NOTES
trr
11.2
3.64
n s
TJ =25°C, IF=4A,
d i/d t= 100A/µs
Qrr
n C
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE B - J UNE 2001
3
ZETEX [ ZETEX SEMICONDUCTORS ]
