ZXMN10A08E6
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
100
V
A
nA
V
I
=250A, V
=0V
(BR)DSS
DSS
D
GS
=100V, V =0V
I
I
0.5
V
V
I
DS
GS
GS
=Ϯ20V, V
100
=0V
GSS
DS
= V
Gate-Source Threshold Voltage
V
R
2.0
=250A, V
GS(th)
DS(on)
DS
GS
D
Static Drain-Source On-State Resistance
(1)
0.40
0.60
V
V
=10V, I =3.2A
D
⍀
⍀
GS
GS
=6V, I =2.6A
D
Forward Transconductance (1)(3)
DYNAMIC (3)
g
5.0
S
V
=15V,I =3.2A
D
fs
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
C
C
C
405
28.2
14.2
pF
pF
pF
iss
V
=50 V, V
=0V,
DS
GS
oss
rss
f=1MHz
t
t
t
t
3.4
2.2
8
ns
ns
ns
ns
nC
d(on)
r
V
R
=30V, I =1.2A
DD
D
Turn-Off Delay Time
Fall Time
=6.0⍀, V
=10V
d(off)
f
G
GS
3.2
4.2
Gate Charge
Q
V
=50V,V
DS
=5V,
g
GS
ID=1.2A
Total Gate Charge
Q
Q
Q
7.7
1.8
2.1
nC
nC
nC
g
V
=50V,V
=10V,
DS
ID=1.2A
GS
Gate-Source Charge
Gate-Drain Charge
gs
gd
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
0.87
0.95
V
T =25°C, I =3.2A,
GS
SD
J
S
V
=0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t
27
32
ns
T =25°C, I =1.2A,
J F
rr
di/dt= 100A/s
Q
nC
rr
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MARCH 2002
4
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