ZC930, ZMV930 series
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
MAX.
12
UNIT
V
Reverse voltage
V
R
Forward current
I
100
mA
mW
mW
ЊC
F
Power dissipation at T
Power dissipation at T
Junction temperature
= 25ЊC SOT23
P
P
330
amb
amb
tot
tot
= 25ЊC SOD323
330
T
125
j
Storage temperature range
T
-55 to +150
ЊC
stg
TUNING CHARACTERISTICS at Tamb = 25°C
PART
Capacitance
Capacitance
V =2.5V
Capacitance
Minimum Q
V =1V
R
V =4V
R
V =4V
R
R
f=50MHz
MIN. pF
8.70
MIN. pF
4.30
MAX. pF
5.50
MAX. pF
2.90
930
931
200
300
200
150
150
80
13.50
17.00
42.00
42.00
95.00
95.00
6.50
7.80
4.00
932
8.50
10.50
27.00
24.75
65.00
57.75
5.50
933
18.00
20.25
40.00
47.25
12.00
12.00
25.00
25.00
933A
934
934A
80
ELECTRICAL CHARACTERISTICS at Tamb = 25°C
PARAMETER
Reverse breakdown voltage
Reverse voltage leakage
CONDITIONS
= 10uA
MIN.
TYP.
MAX.
UNIT
I
12
V
nA
R
V
= 8V
0.2
100
400
R
Temperature coefficient of capacitance
V
= 3V, f = 1MHz
300
ppCm/ЊC
R
ISSUE 10 - JUNE 2007
2
ZETEX [ ZETEX SEMICONDUCTORS ]
