SOT23 PNP SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 2 SEPTEMBER 95
PARTMARKING DETAILS -
7
BSS82B - CL
BSS82C - CM
BSS82B
BSS82C
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
BSS80B
BSS80C
h
FE
f
T
C
obo
t
d
t
r
t
s
t
f
40
100
200
8
10
40
80
30
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
P
TOT
t
j
:t
stg
MIN.
-60
-60
-5
-10
-10
-10
-0.4
-1.6
120
300
MHz
pF
ns
ns
ns
ns
V
CC
=-30V, I
C
=-150mA
I
B1
=-I
B2
=-15mA
µ
A
VALUE
-60
-60
-5
-800
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Static Forward
Current
Transfer Ratio
Transition Frequency
Output Capacitance
Delay Time
MAX.
UNIT
V
V
CONDITIONS.
I
C
=-10
µ
A
I
C
=-10mA*
I
E
=-10
µ
A
nA
V
CB
=-50V,
V
CB
=-50V, T
amb
=150 °C
V
BE
=-3V
I
C
=-150mA,I
B
=-15mA*
I
C
=-500mA,I
B
=50mA*
I
C
=150mA,V
CE
=10V
I
C
=150mA,V
CE
=10V
V
CE
=-20V,I
C
=-50mA
f=100MHz
V
CB
=-10V,f=1MHz
nA
V
V
Rise Time
Storage Time
Fall Time
* Measured under pulsed conditions. Pulse width = 300
µ
s. Duty cycle 2%
PAGE NUMBER
ZETEX [ ZETEX SEMICONDUCTORS ]
