SOT23 NPN SILICON PLANAR MEDIUM
POWER SWITCHING TRANSISTORS
ISSUE 2 SEPTEMBER 1995
7
PARTMARKING DETAILS
BSS66 -
BSS67 -
BSS66R -
BSS67R -
M6
M7
M8
M9
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
TOT
t
j
:t
stg
MIN.
40
60
6
50
0.20
0.30
0.65
20
35
50
30
15
40
70
100
60
30
250
300
4
8
Typ. 6
35
200
50
0.85
0.95
BSS66
BSS67
C
B
VALUE
60
40
6
200
100
50
330
-55 to +150
UNIT
V
V
V
mA
mA
mA
mW
°C
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
V
(BR)CBO
V
(BR)EBO
I
CES
V
CE(sat)
V
BE(sat)
h
FE
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
Collector-Emitter Breakdown Voltage V
(BR)CEO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector- Emitter Cut-off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation Voltage
Static Forward Current
Transfer Ratio
BSS66
MAX. UNIT
V
V
V
nA
V
V
V
V
CONDITIONS.
I
C
=1mA
I
C
=10µA
I
E
=10µA
V
CES
=30V
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA*
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA*
I
C
=100µA,
I
C
=1mA,
I
C
=10mA, V
CE
=1V
I
C
=50mA*,
I
C
=100mA*,
I
C
=100µA,
I
C
=1mA,
I
C
=10mA, V
CE
=1V
I
C
=50mA*,
I
C
=100mA*,
150
Static Forward Current
Transfer Ratio
BSS67
h
FE
300
Transition Frequency
Collector-Base Capacitance
Emitter-Base Capacitance
Noise Figure
BSS66
BSS67
f
T
C
obo
C
ibo
N
t
d
; t
f
t
s
t
f
MHz
MHz
pF
pF
dB
ns
ns
ns
I
C
=10mA, V
CE
=20V
f=100MHz
V
CB
=5V, f=100kHz
V
EB
=0.5V, f=100kHz
I
C
=100µA, V
CE
=5V
R
S
=1kΩ, f=10Hz to15.7 kHz
V
CC
=3V, I
C
=10mA
I
B1
= I
B2
=1mA
Switching times: Delay; Rise
Storage Time
Fall Time
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
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