SOT23 PNP SILICON PLANAR
HIGH SPEED TRANSISTOR
ISSUE 2 - SEPTEMBER 1995
PARTMARKING DETAIL
7
BSS65 - L1
BSS65R - L5
BSS65
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
V
(BR)CBO
V
(BR)EBO
Cut-Off Currents
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
-0.75
-0.82
30
40
400
6
6
23
34
60
90
MIN.
-12
-12
-4
-100
-100
-0.15
-0.25
-0.98
-1.20
150
MHz
pF
pF
nS
nS
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
C
P
TOT
t
j
:t
stg
TYP.
MAX.
VALUE
-12
-12
-4
-200
-100
-50
330
-55 to +150
UNIT
V
V
V
nA
nA
V
V
V
V
CONDITIONS.
I
C
=-10mA
I
C
=-10
µ
A *
I
E
=-10
µ
A
V
CB
=-6V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-10mA, I
B
=-1mA
I
C
=-30mA, I
B
=-3mA
I
C
=-10mA, I
B
=-1mA
I
C
=-30mA, I
B
=-3mA
I
C
=-10mA, V
CE
=-0.3V
I
C
=-30mA, V
CE
=-0.5V
I
C
=-30mA, V
CE
=-10V,
f=100MHz
V
CB
=-5V, I
E
=0,
f=1MHz
V
EB
=-0.5V, I
C
=0, f=1MHz
I
C
=-30mA
I
B1
= -I
B2
= -1.5mA
V
CC
=-10V
UNIT
V
V
V
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
BreakdownVoltages
V
(BR)CEO
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
Collector-Base
Capacitance
Emitter Base Capacitance
f
T
C
obo
C
ebo
t
on
t
off
Switching Times
Turn-On Time
Turn-Off Time
PAGE NUMBER
ZETEX [ ZETEX SEMICONDUCTORS ]
