SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 SEPTEMBER 95
7
BSS63
C
B
E
COMPLIMENTARY TYPE
PARTMARKING DETAIL
BSS64
BSS63 - T3
BSS63R - T6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
Static Forward Current
Transition Frequency
SYMBOL
V
(BR)
V
(BR)CEO
V
(BR)EBO
I
EBO
I
EBO
V
CE(sat)
V
BE(sat)
30
30
50
Typ
85
Typ.
3
MHz
MIN.
-110
-100
-6
-100
-50
-200
-250
-900
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
TOT
t
j
:t
stg
MAX.
VALUE
-110
-100
-6
-100
330
-55 to +150
UNIT CONDITIONS.
V
V
V
nA
nA
mV
mV
I
C
=-10
µ
A
I
C
=-100
µ
A*
I
E
=-10
µ
A
V
CB
=-90V,
V
CB
=-90V,T
amb
=150
o
C
V
EB
=-6V
I
C
=-25mA, I
B
=-2.5mA
I
C
=-25mA, I
B
=-2.5mA
I
C
=-10mA, V
CE
=-1V
I
C
=25mA, V
CE
=1V
V
CE
=-5V, I
C
=25mA
f=35 MHz
V
CB
=-10V, f=1MHz
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
µ
A
h
FE
f
T
Output Capacitance
C
obo
pF
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
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