BSS138
TYPICAL CHARACTERISTICS
I
DS
-Drain Source Current (A)
1.0
V
GS
=10V
5V
4.5V
4V
100
V
GS
=2.5V 3V 3.5V
4V
3.5V
0.6
3V
R
DS(on) -
Drain Source
On Resistance (Ohms)
0.8
10
0.4
2.5V
0.2
80µs Pulsed Test
5V
7V
10V
2V
0
0
1
2
3
4
5
1.0
0.01
0.1
1.0
V
DS
-Drain Source Voltage (Volts)
I
D
-Drain Current (Amperes)
Saturation Characteristics
Typical On Resistance vs.
Drain Current
g
fs
-Forward Transconductance (mS)
500
g
fs
-Forward Transconductance (mS)
500
400
400
300
V
DS
=25V
80µs Pulsed Test
300
V
DS
=25V
80µs Pulsed Test
200
200
100
100
0
0
0.2
0.4
0.6
0.8
1.0
0
0
2
4
6
8
10
I
D
-Drain Current (Amperes)
V
GS
-Gate Source Voltage (Volts)
Typical Transconductance vs.
Drain Current
100
C
iss
C
rss
Typical Transconductance vs.
Gate - Source Voltage
Normalised R
DS(on)
And V
GS(th)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-40
0
40
80
0
C
oss
NOTE:-V
GS
=0V
F=1MHz
C
iss
R
DS(on)
AT
V
GS
=5V
I
D
=200mA
C-Capacitance (pF)
10
C
oss
V
GS(th)
AT
I
D
=1mA
V
DS
=V
GS
C
rss
1
0.1
1
10
100
120
160
V
DS
-Drain Source Voltage (Volts)
T-Temperature ( °C)
Typical Capacitance vs.
Drain - Source Voltage
Normalised R
DS(on)
And V
GS(th)
vs. Temperature
3 - 73
ZETEX [ ZETEX SEMICONDUCTORS ]
