BSP75N
Absolute maximum ratings
Parameter
Continuous drain-source voltage
Drain-source voltage for short circuit protection V
IN
= 5V
Drain-source voltage for short circuit protection V
IN
= 10V
Continuous input voltage
Peak input voltage
Operating temperature range
Storage temperature range
Power dissipation at T
A
=25°C
(a)
Power dissipation at T
A
=25°C
(c)
Continuous drain current @ V
IN
=10V; T
A
=25°C
(a)
Continuous drain current @ V
IN
=5V; T
A
=25°C
(a)
Continuous drain current @ V
IN
=5V; T
A
=25°C
(c)
Continuous source current (body diode)
(a)
Pulsed source current (body diode)
(b)
Unclamped single pulse inductive energy
Load dump protection
Electrostatic discharge (human body model)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V
DS
V
DS(SC)
V
DS(SC)
V
IN
V
IN
T
j
,
T
stg
P
D
P
D
I
D
I
D
I
D
I
S
I
S
E
AS
V
LoadDump
V
ESD
Limit
60
36
20
-0.2 ... +10
-0.2 ... +20
-40 to +150
-55 to +150
1.5
0.6
1.3
1.1
0.7
2.0
3.3
550
80
4000
E
40/150/56
Unit
V
V
V
V
V
°C
°C
W
W
A
A
A
A
A
mJ
V
V
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Symbol
R
JA
R
JA
R
JA
Limit
83
45
208
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper. Allocation of 6cm
2
copper 33% to source tab and 66% to drain pin with tab and drain pin electrically isolated.
(b) For a device surface mounted on FR4 board as (a) and measured at t<=10s.
(c) For a device surface mounted on FR4 board with the minimum copper required for connections.
© Zetex Semiconductors plc 2006