N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93
FEATURES
* 60 Volt V
DS
* R
DS(on)
=5Ω
BS170P
D
G
S
REFER TO ZVN3306A FOR GRAPHS
E-Line
TO92 Compatible
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
60
270
3
±20
625
-55 to +150
UNIT
V
mA
A
V
mW
°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate Body Leakage
Zero Gate Voltage
Drain Current
SYMBOL
BV
DSS
V
GS(th)
I
GSS
I
DSS
MIN.
60
0.8
3
10
0.5
5
200
TYP.
MAX.
UNIT
V
V
nA
µA
Ω
mS
CONDITIONS.
I
D
=100µA, V
GS
=0V
I
D
=1mA, V
DS
=V
GS
VGS=15V, V
DS
=0V
V
GS
=0V, V
DS
=25V
V
GS
=10V, I
D
=200mA
V
DS
=10V, I
D
=200mA
Static Drain-Source
R
DS(on)
on-State Resistance (1)
Forward
g
fs
Transconductance (1)(2)
Input Capacitance (2)
Turn-On Time (2)(3)
Turn-Off Time (2)(3)
C
iss
t
(on)
t
(off)
60
10
10
pF
ns
ns
V
GS
=0V, V
DS
=10V
f=1MHz
V
DD
≈15V,
I
D
=600mA
(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2% (2) Sample test
(3) Switching times measured with a 50Ω source impedance and <5ns rise time on a pulse generator
3-27
ZETEX [ ZETEX SEMICONDUCTORS ]
