N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93
FEATURES
* 200 Volt V
DS
* R
DS(on)
=23Ω
BS107P
D
G
S
REFER TO BS107PT FOR GRAPHS
E-Line
TO92 Compatible
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
200
0.12
2
±20
500
-55 to +150
UNIT
V
A
A
V
mW
°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Drain-Source
Breakdown Voltage
Gate Body Leakage
Drain Cut-Off Current
Drain Cut-Off Current
Static Drain-Source
on-State Resistance
SYMBOL
BV
DSS
I
GSS
I
DSS
I
DSX
R
DS(on)
15
MIN.
200
TYP.
230
10
30
1
23
30
MAX.
UNIT
V
nA
nA
µA
Ω
Ω
CONDITIONS.
I
D
=100µA, V
GS
=0V
VGS=15V, V
DS
=0V
V
GS
=0V, V
DS
=130V
V
GS
=0.2V, V
DS
=70V
V
GS
=2.6V, I
D
=25mA*
V
GS
=5V, I
D
=100mA*
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
3-23
ZETEX [ ZETEX SEMICONDUCTORS ]
