SOT23 NPN SILICON PLANAR
VHF/UHF TRANSISTOR
ISSUE 4 – MARCH 2001
PARTMARKING DETAILS
BFQ31A
– S4
BFQ31AR – S5
BFQ31A
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
:T
stg
VALUE
30
15
3
100
50
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Output Capacitance
Input Capacitance
Noise Figure
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
obo
C
ibo
N
100
600
1.7
2.0
6.0
MHz
pF
pF
dB
30
15
3
0.01
0.4
1.0
BFQ31A
MAX.
V
V
V
I
C
=1.0
µ
A, I
E
=0
I
C
=3mA, I
B
=0*
I
E
=10
µ
A, I
C
=0
V
CB
=15V, I
E
=0
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
I
C
=3mA, V
CE
=1V
I
C
=4mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
V
CB
=0.5V, f=1MHz
I
C
=1mA, V
CE
=6V
R
s
=400
Ω
, f=60MHz
UNIT
CONDITIONS.
µ
A
V
V
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
TBA
ZETEX [ ZETEX SEMICONDUCTORS ]
