SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - JANUARY 1996
7
BFN19
C
COMPLEMENTARY TYPE - BFN18
PARTMARKING DETAIL - DH
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
-300
-300
-5
-500
-200
-100
-1
-65 to +150
UNIT
V
V
V
mA
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Output Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
25
40
30
Typ.
100
Typ.
2.5
MHz
pF
MIN.
-300
-300
-5
-100
-20
-100
-0.5
-0.9
MAX.
V
V
V
nA
µA
nA
V
V
UNIT
CONDITIONS.
I
C
=-100µA
I
C
=-1mA*
I
E
=-100µA
V
CB
=-250V
V
CB
=-250V, T
amb
=150°C
V
EB
=-3V
I
C
=-20mA, I
B
=-2mA
I
C
=-20mA, I
B
=-2mA
I
C
=-1mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-30mA, V
CE
=-10V*
I
C
=-20mA, V
CE
=-10V
f=20MHz
V
CB
=-30V,f=1MHz
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
For typical characteristics graphs see FMMTA92 datasheet.
3 - 45
ZETEX [ ZETEX SEMICONDUCTORS ]
